Micromechanical device latching

ABSTRACT

A micromechanical latching system usable to achieve small element stabilization during and following the fabrication of a MEMS device. Realization of sliding latching elements from semiconductor materials such as polysilicon using integrated circuit techniques is included. Provisions for manual manipulation of the latching elements between unlatched and latched conditions are also included along with two exemplary MEMS device applications of the latching system. The achieved latching system contributes to substrate interference free improved flip-chip fabrication of Integrated Microsystem micromechanical devices by way enabling improved alignment accuracy processing.

The present application is related to and claims priority of priorProvisional Patent Application No. 60/419,336, filed Oct. 17, 2002, nowabandoned, entitled “Latching Off-Chip Hinge Mechanism forMicromechanical Systems (MEMS) Components”. The contents of thisProvisional Patent Application are hereby incorporated by referenceherein.

RIGHTS OF THE GOVERNMENT

The invention described herein may be manufactured and used by or forthe Government of the United States for all governmental purposeswithout the payment of any royalty.

CROSS REFERENCE TO RELATED PATENT DOCUMENTS

The present document is somewhat related to the co pending and commonlyassigned patent application documents “OFF SUBSTRATE FLIP-CHIP APPARATUSAND METHOD”, Ser. No. 10/690,158; and “HINGED BONDING OF MICROMECHANICALDEVICES”, Ser. No. 10/690,159 that are filed of even date herewith. Thecontents of these somewhat related applications are hereby incorporatedby reference herein.

BACKGROUND OF THE INVENTION

Commercial semiconductor foundries often limit designers to a fewchoices of materials or number of structural layers in a fabricateddevice. As a result it may not be possible to create many specializeddevices required for demanding semiconductor or Micro Electro MechanicalSystems (MEMS) applications without custom fabrication methods, methodsthat are usually expensive to employ. As an alternative, highly complexstructures can be made by flip-chip bonding of surface-micromachinedfeatures onto a variety of other substrates or even other chipsfabricated in the same process. The original often silicon hostsubstrate is then discarded during a following release etch to providefor example, advanced MEMS devices that are suitable for RF, microwave,or optical applications where specific material properties or additionalstructural layers are required.

In recent years, the use of flip-chip assembly to create advanced MEMSdevices has been shown to be a fast, reliable, simple and inexpensivemethod to produce highly planarized devices consisting of as many asfive structural layers on virtually any desired substrate. This processhas been demonstrated with a variety of micromirror arrays and variablecapacitors fabricated atop ceramic substrates to achieve improved RFcharacteristics. Even more advanced micromirror arrays have beenfabricated atop receiving modules prefabricated in a same processing runas the host module. Numerous styles of cantilever, torsion, and pistonmicromirror arrays have been demonstrated and these boast a variety ofdesirable characteristics. Mirror devices can for example achieve CMOScompatible low voltage addressing potentials or more than 3 micrometersof stable mechanical deflection since the mirror surfaces can rest asmuch as 10 micrometers above the substrate. Typical arrays have beendesigned with as much as 98.8% active surface area. Torsion andcantilever devices have demonstrated as much as 20 degrees of tilt usinga variety of flexure arrangements to reduce needed electrical addressingpotentials. The mirror surface of each such device is initiallyfabricated as the underside of a first releasable structural layer suchthat no topographical effects are induced. As a result, flip-chipmicromirrors consistently demonstrate less than 2 nanometers ofroot-mean square surface roughness.

Flip chip bonding of two integrated circuit sized component modules intoa MEMS or other single device has however almost universally requiredeach of the component modules to remain on its fabrication substrate ora substitute substrate during the bonding operation. The known fewexceptions to this rule involve especially fabricated modules affordingsome special forms of protection for one module. The present inventionchanges this situation into one wherein someone with access to the mostbasic device fabrication capability and its tools can achieve flip chipbonded devices, including devices fabricated on two different andincompatible substrate materials and devices fabricated to includemultiple MEMS modules in stacked array. Moreover, the present inventioneliminates a significant difficulty in correctly aligning twosubstrate-mounted modules for bonding. Since the present inventionallows use of simple visual alignment procedures it eliminates the needfor an expensive piece of measurement-capable fabrication equipment andneed for the skilled user to operate this equipment. In direct terms,the present invention is thus concerned with improved off-substratebonding.

The prior publication and patent art includes numerous examples of hingeand pivot arrangements used for erecting structural elements in anassembled MEMS device or as an active part of the MEMS device function.The concept of using a hinge or pivot as a key part of the assembly orfabrication procedure for a MEMS device, and especially for off chiprotation of substrate-free MEMS modules, appears however to besignificantly less well known in the art. Several examples of prior artdocuments illustrating this state of the MEMS art are included in thereferences identified with the filing of the present document.

The present invention provides a latching arrangement desirable for useduring the flip-chip fabrication of a MEMS device.

It is therefore an object of the present invention to provide a latchingarrangement in which simple latching elements are achieved in integratedcircuit size elements.

It is another object of the present invention to provide a latchingarrangement that is operable by manual manipulation of movable andlatching elements.

It is another object of the present invention to provide a MEMS latchingarrangement that may be fabricated in silicon semiconductor material orin a variety of other semiconductor art compatible structural materials.

It is another object of the present invention to provide a MEMS latchingarrangement in which a multiple structural material layers derived latchelement provides movable element arrest and capture during devicefabrication.

It is another object of the present invention to provide an externalmanipulation forces-engageable MEMS latch assembly.

It is another object of the present invention to provide a MEMS latchassembly usable for a variety of MEMS element fixation purposes duringand after device assembly.

It is another object of the present invention to provide a MEMS latchassembly that is usable in single or multiple latch environments.

It is another object of the present invention to provide a MEMS latcharrangement employing multiple sliding elements that are held captive.

It is another object of the present invention to provide a MEMS latcharrangement providing inadvertent excessive manual manipulation motionprotection for delicate MEMS elements.

It is another object of the present invention to provide a MEMS latcharrangement employing latch elements of unusual multiple layer rigidityand structural integrity.

It is another object of the present invention to provide a captured MEMSlatch arrangement involving a first movable element and a second movableelement held captive on this first movable element.

It is another object of the present invention to provide a latchingarrangement that occupies essentially two-dimensional space in a MEMSdevice.

It is another object of the present invention to provide a latchingarrangement that can be fabricated in the form of overlapped but latersegregable MEMS components.

It is another object of the present invention to provide a MEMS latchingapparatus inclusive of a positive engagement arrangement with companionMEMS elements.

These and other objects of the invention will become apparent as thedescription of the representative embodiments proceeds.

These and other objects of the invention are achieved by the hinge andlatch method of fabricating an electronically controlled MEMS devicecomprising the steps of:

forming electronic control circuit module and MEMS active element moduleportions of said MEMS device on first permanent and second sacrificialsubstrate members respectively;

said second sacrificial substrate MEMS active element module formingstep including providing multiple substrate layers-resident sacrificialsupplementary components comprised of a substrate hinge mounted etchplate, etch plate to MEMS active element module connection tethers, asubstrate coupled etch plate latch assembly and an etch plate tosacrificial substrate anchor assembly;

releasing said MEMS active element module and selected of saidsacrificial supplementary components from forming-related confinement insaid substrate multiple layers into movable, hinge mounted to one ofsaid sacrificial substrate and to other of said supplementarycomponents, states;

rotating said released hinge mounted etch plate and tether coupled MEMSactive element module combination at said hinge into a selected off ofsacrificial substrate position by applying external forces to said etchplate and tethered MEMS active element module combination;

latching said etch plate and tethered MEMS active element modulecombination into said selected off MEMS substrate rotated position bycoupling slidably movable portions of said etch plate latch assemblywith said etch plate using external, latch assembly-received, forces;

disposing said MEMS active element module, said tether-attached etchplate, and said hinge mounted MEMS active element sacrificial substratecombination into a position of registered MEMS active element moduleengagement with said electronic control circuit module; and

engaging said MEMS active element module and said electronic controlcircuit module into a registered, fixed, device housing-surrounded,electronically controlled MEMS device.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings incorporated in and forming a part of thespecification, illustrate several aspects of the present invention andtogether with the description serve to explain the principles of theinvention. In the drawings:

FIG. 1 shows the layout of a micromirror module array on a sacrificialfabrication substrate.

FIG. 2 shows the FIG. 1 module array in a hinge-rotated, latched,off-chip state.

FIG. 3 shows the layout of an electronic circuit module on which theFIG. 2 array may be mounted to form a plurality of micromirror MEMSdevices.

FIG. 4 shows a representative partial cross section view of arepresentative MEMS device inclusive of modules of the FIG. 2 and FIG. 3types.

FIG. 5 a shows a more detailed view of one portion of a FIG. 1 type ofMEMS module.

FIG. 5 b shows the FIG. 5 a apparatus in a rotated element condition.

FIG. 5 c shows the FIG. 5 a apparatus in a rotated and latched elementcondition.

FIG. 6 a shows a cross sectional view taken along the section line a—ain FIG. 5 c.

FIG. 6 b shows a cross sectional view taken along the section line b—bin FIG. 5 c.

FIG. 6 c shows a cross sectional view taken along the section line c—cin FIG. 5 c.

FIG. 6 d shows a cross sectional view taken along the section line d—din FIG. 5 c.

FIG. 6 e shows a cross sectional view taken along the section line e—ein FIG. 5 c.

FIG. 6 f shows a cross sectional view taken along the section line f—fin FIG. 5 c.

FIG. 6 g shows a cross sectional view taken along the section line g—gin FIG. 5 c.

FIG. 6 h shows a cross sectional view taken along the section line h—hin FIG. 5 c.

FIG. 6 i shows a cross sectional view taken along the section line i—iin FIG. 5 c.

FIG. 6 j shows a cross sectional view taken along the section line j—jin FIG. 5 c.

FIG. 6 k shows a cross sectional view taken along the section line k—kin FIG. 5 c.

FIG. 7 shows details of a typical hinge mechanism usable with thepresent invention.

FIG. 8 shows a first part of another use of latch concepts in thepresent invention.

FIG. 9 shows a second part of another use of latch concepts in thepresent invention.

FIG. 10 shows a completed MEMS device view of the FIG. 8 and FIG. 9latch concepts.

FIG. 11 shows a MEMS module alignment result achieved with the presentinvention.

DETAILED DESCRIPTION OF THE INVENTION

The latching off-chip arrangement of the present invention enables theprerelease of for example MEMS modules into a state that is accessibleand convenient for ensuing processing such as bonding with for examplean electronic circuit module to form a flip-chip MEMS device. It appearsespecially desirable that the MEMS module in the present invention isfree of its fabrication substrate and yet sufficiently well supportedand protected to be of convenient access and manipulation capabilityduring bonding and possibly other steps of the MEMS device fabricationsequence. FIG. 1, FIG. 2, FIG. 3 and FIG. 4 in the drawings illustratethe use of this latching off-chip hinge mechanism in a preliminaryoverall manner. In FIG. 1, FIG. 2 and FIG. 3 a flip-chip MEMS array isrotated and latched off the edge of a host module, i.e., off asacrificial substrate used to fabricate the MEMS module portion of theMEMS device. As may be apparent to those skilled in the MEMS art it isalso possible to reverse the roles of the MEMS module array and theelectronic circuit module array in this FIG. 1, FIG. 2, FIG. 3 and FIG.4 rotation based sequence with suitable modifications of the arrays. Adetailed description of the FIG. 1 and FIG. 2 mechanism and itsfabrication, assuming selection of a provided optional MEMS modulerotation option, follows the present overall introductory discussion.

The micromirror array 100 shown in FIG. 1 is arranged to include an 8×8modules array of cantilever micromirror modules intended for marriagewith similarly sized and compatibly disposed electronic circuit modulesthat may also be in array form. The present invention is of course alsoapplicable to individual devices that are not disposed in this arrayform. In FIG. 1, the micromirror array 100 is attached to a hingemechanism 102 through tethers 104 that can be severed once the array isrotated and bonded onto, for example, a CMOS receiving module array asis shown at 300 in FIG. 3. The tethers 104 may be of whatever length isneeded in order to allow positioning of a MEMS module over theelectronic circuit module i.e., tether 104 length is determined by thesize and layout of the electronic circuit module and the need to reachacross parts of this module in positioning and aligning the MEMS module.

After release, the array 100 is rotated off the edge of the chip 106 andlatched into place by a slider assembly shown generally at 108 in theFIG. 2 drawing. An etch plate or release plate or protective member orshield member or header member 112 (herein primarily referred-to as anetch plate member) is used to connect the tethers 104 to the hingemechanism 102 and serves the significant additional functions describedsubsequently herein. The name “etch plate” is recognized as beingsomewhat generic and non descriptive at first blush for the element 112,however, since one of the functions of this element is to supplystructural support for a MEMS device during susceptible parts of anetching process this name is believed not altogether inappropriate. Thehinge mechanism 102 is anchored to the substrate 110 of the chip 106 bya row of first hinge portions. A row of second hinge portions connectsthe etch plate or protective member or header members 112 to the row offirst hinge portions and the substrate 110 via a hinge pin, all asdescribed in greater detail below herein.

Notably in the FIG. 2 status, the array 100 can be metallized withreflective materials without masking or preprocessing. The array 100 isthen aligned over the CMOS receiving module 300 of FIG. 3 where bonding,using for example one of a variety of conductive adhesive materials, maybe accomplished. It is particularly notable that the procedurerepresented in FIG. 1, FIG. 2 and FIG. 3 can be completed using only astandard probe station probe element as a manipulating tool. In theidentified example the final MEMS devices will consist ofsurface-micromachined mirror surfaces that are bonded directly aboveaddress electrodes located over, in this instance, latching CMOSaddressing circuits. Each mirror surface may be supported by compliantflexures connected to a bonding frame that surrounds it. This frame alsoprovides uniform resting support throughout the array.

Additionally in order to better appreciate details of the presentinvention FIG. 4 in the drawings illustrates a single MEMS deviceachievable with the assistance of the invention in which a mirrorsurface deflects when a CMOS address cell is activated. In the FIG. 4cross sectional view, an individual cantilever micromirror 400 and 400′(in its two operational positions) of a MEMS module 402 is disposed inpositions enabling its control by the electrical circuits of a CMOSmodule 404. In the FIG. 4 illustration, the address electrode 406 of theCMOS module 404 is shown wired to the drain of some arbitrarycomplementary logic circuit transistor to effect this control. Theelectrode 406 is formed in the upper metal layer of a CMOS process andremains covered with a thin layer of oxide 408 for protection andisolation from the mirror surface. Each feature within a FIG. 4 type ofdevice is carefully arranged with specific topographical considerationssuch that mating elements align properly when positioned into the FIG. 4condition and no object interferes with the motion of any other.

In FIG. 4, the mirror 400 lower surface will actually come to rest on anarea of field oxide at 412. Without the spacer layers shown under eachcolumn of the bonding frame, at 410 for example, some of the mirror 400surfaces in an array would achieve no more than a 2 degree range oftilt. The spacer layers 410 when added to the MEMS module howeverelevate the mirror 400 enough for many devices to achieve roughly 5degrees of tilt. The pivot point for the mirror 400 is located on thespacer layers 410 portion of the MEMS module 402 and appears at 413 inFIG. 4. The FIG. 4 drawing illustrates the final disposition of themodules 402 and 404 in a MEMS device preferably following use of thepresent invention in achieving this disposition. The present inventionis of course not limited to micromirror devices as shown in FIG. 4 butcan relate to most MEMS device types.

FIG. 5 in the drawings includes the vertically aligned views of FIG. 5a, FIG. 5 b and FIG. 5 c and shows details previously recited andadditional details relevant to the present invention. Identificationnumbers appearing in the FIG. 5 drawings and the other drawings hereinrepeat those used in FIG. 1 through FIG. 4 to the best degree possible;in other words, element identification numbers remain consistent in thedrawings of the present document once assigned, to the best degreepossible. New identification numbers including the drawing FIG. numberin the hundreds digit position are assigned in FIG. 5 and the ensuing asare needed in the related discussion.

The array 100 and the FIG. 5 mechanism may be fabricated from a varietyof materials including semiconductor materials. Notably the materialsused in the array 100 and the FIG. 5 mechanism may be either similar toor totally different from and incompatible-with the materials used inthe electronic circuit module 300 or 404 with which the array 100 andthe FIG. 5 mechanism are to be married in a completed MEMS device. Thisis of course one of the major advantages of a MEMS device. One family ofmaterials that are convenient for realization of at least experimentalor prototype MEMS modules is based on the Multi-User MEMS Process(MUMPS) that is available from Cronos Incorporated, www.memsrus.com.Cronos Incorporated was acquired by MEMSCAP in November, 2002, seehttp://www.memscap.com/. The MUMPS process is especially relevant toMEMS device fabrication in a so-called semiconductor foundry settingwhere a significant volume of and variety of semiconductor devices ofindividual customer origin are fabricated on a commercial basis.Fundamentally the MUMPS process involves the use of Siliconsemiconductor materials and provides two releasable, user-configured,layers of poly-crystalline doped and electrically conductive siliconstructural material, herein these layers are identified as “Poly-1” and“Poly-2”. These layers are first and second deposited layers over asubstrate or substrate-carried structures, layers that are segregated byan intervening layer of easily etched and removed oxide material such assilicon dioxide. A substrate attached “Poly-0” layer is also present inthe MUMPS process however this layer is not used in the flip processdescribed herein. Use of the MUMPS process and these materials ispresumed in following portions of this document. The trapped MUMPSprocess oxide layer is preferably of 0.5 micrometer thickness in thepresent invention. Notwithstanding this MUMPS process presumption, it isof course realized that MEMS devices can be fabricated from a largevariety of materials including, for example Gallium Arsenide, Germaniumand other semiconductor materials, and therefore applicant desires notto be limited by this disclosure in terms of the MUMPS and Siliconmaterials process.

The MUMPS process and its two oxide-separated polysilicon layers is inreality a desirably simple and inexpensive process in comparison withfor example the SUMIT process which provides up to, four releasablelayers of semiconductor material. The SUMIT process is known by the morecomplete name of Sandia Ultraplanar Multi-level MEMS Technology and isavailable from Sandia National Laboratories at Kirtland Air Force Basein Albuquerque, N.Mex., http://mems.Sandia.gov/scripts/index.asp. Eitherthe SUMIT or the MUMPS process or another process of these natures as isknown in the art may be used with the present invention. It isespecially notable that even a relatively simple and two layer processsuch as MUMPS may be enhanced significantly by way of the presentinvention since the invention easily supports an arrangement whereinmultiple MEMS modules are fabricated on the same or on differentsubstrates and are then stacked on top of each other during the bondingprocess of a MEMS device. In this manner, the present invention enablesthe fabrication of a complex MEMS device of 2, 4, 6, 8 or more layers oreven any number, N, layers while using merely a simple and inexpensive,even two layered, fabrication process. The complexity of the fabricatedMEMS device can be enhanced significantly by this access to a greaternumber of releasable layers during fabrication.

In the FIG. 7 drawing, the clevis element of a hinge appears at 702 anda contoured form of a pin element appears at 700. The wings 704 and 706in the FIG. 7 hinge attach the clevis element to a substrate memberwhile the pin element 700 attaches to a hinge-anchored rotating element.Thus the FIG. 7 hinge is a reverse arrangement of the hinge portionsappearing in the FIG. 5 drawing. A hinge of similar arrangement to thatof the FIG. 5 and FIG. 7 hinge is additionally disclosed in the U.S.Pat. No. 5,994,159 of V. A. Aksyuk et al. and also in the U.S. Pat. No.6,300,156 of H. L. Decker et al.; patents that are hereby incorporatedby reference herein. Notably the Aksyuk et al. and the Decker et al.patents involve the erection of pseudo three-dimensional structures onthe surface of a MEMS device rather than the rotated, sacrificialsubstrate-free, processing of a MEMS module.

In actually each of the hinge elements appearing in the FIG. 5 and theFIG. 7 drawings is comprised of polysilicon in a MUMPS process device.According to this arrangement, each of the clevis and wings 702, 704,706 are portions fashioned by etching from a single upper layer ofpolysilicon, i.e., a Poly-2 layer while the pin element 700 is part of alowermost and first deposited lower Poly-1 layer of polysilicon. Thesetwo layers of polysilicon are originally separated by an etch-responsivelayer of oxide material that initially fills the interior of the clevis702 between polysilicon layers until it is removed in a controlledetching sequence to free the pin 700 into the illustrated rotatablecondition. During fabrication of the polysilicon layers once thepolysilicon 1 hinge pin 700 is formed the oxide layer and the overlyingpolysilicon 2 layer conform to its shape and thus form the shape of theclevis 702. Notably the uppermost or Poly-2 of the two polysiliconlayers is not required to completely surround the pin element 700 inorder to achieve the FIG. 7 hinge; the lower portion of the clevis 702is in reality supplied by the substrate of the device. The twopolysilicon layers of the MUMPS process are in actually also sufficientto form each of the other MEMS module elements shown in the FIG. 5drawing as is noted in appropriate locations of the following paragraphsof description.

The etch plate 112 is fabricated with initial tether connections to theanchor member 516 shown in FIG. 5 a and FIG. 5 c. According to thisarrangement, the etch plate remains captured in its connection with thesubstrate 110 notwithstanding removal of the oxide layer (or layers)that originally hold it captive, i.e., oxide layers removed during thecourse of normal fabrication of the MEMS module. As this statementimplies, the present invention can be fabricated in structural layers ofa device that are elsewhere needed; the addition of layers for presentinvention purposes is thus not necessary.

Tethered release of the etch plate into a rotatable condition in theFIG. 5 apparatus is therefore a fully controllable event that may beinitiated at a convenient point in the fabrication process following theoxide etching event, a point in fact preferably selected to be late inthe processing and after release of the array 100. Remainder portions ofthe tether elements used to accomplish this retention and release ofetch plate 112 from substrate anchor element 516 appear at both 518 and520 in the FIG. 5 c drawing. These remaining portions are joined in theFIG. 5 a pre-rotation condition of the MEMS device and are severed by aburn-through electrical current or physical rupture or by laser burningin the manner of the tethers 104 as described elsewhere herein. In theFIG. 5 a pre release condition the joined tethers at 518 and 520 (inFIG. 5 c) oppose the uplifting force of the lifting beams 508 and 510.Notably processing of the FIG. 5 modules can be accomplished by way ofconventional non-rotating flip-chip processing techniques by omittingthe severing of tethers 518 and 520 and thus maintaining the MEMS modulein the FIG. 5 a condition if desired. Cross sectional details of thesubstrate anchor element connecting with tethers 104 are shown in theFIG. 6 a drawing.

The cooperating action of the tethers 518, 520 and anchor 516 in holdingthe etch plate 112 in its substrate adjacent FIG. 5 a condition untilintentionally terminated by a burn or laser releasing event thus allowsthe FIG. 5 apparatus to electively be used in either the hinge-rotatedor the conventional non-hinge-rotated bonding modes. If the tethers 518,520 are maintained in integral condition the FIG. 5 MEMS module may bebonded in the conventional substrate present flip-chip manner since thecombination of hinge 512 and anchored tethers immobilize the MEMS module100 with respect to the substrate. If however these tethers aresegregated and hinge rotation of the etch plate and MEMS module arethusly allowed to occur, then the presently discussed off chip bondingmode becomes available.

Also appearing in the FIG. 5 a and FIG. 5 c drawings are a pair oflifting beam members 508 and 510 used in accomplishing an initialseparation of the etch plate 112 and the array 100 from the substrate110 in commencement of the FIG. 5 b and FIG. 5 c illustrated off chiprotation process after segregation of tethers 104. The lifting beams 508and 510 may be simply passive bimorph actuators, fabricated frompolysilicon and overlying gold for example, that are used to initiallyelevate the arrays as a result of temperature-induced thermal stressesgenerated in the lifting beams following environmental temperaturechange (e.g. change from fabrication temperature to room temperature).This thermal mismatch between the two layers of each beam 508 and 510results in an upward force at the rightmost end of the beams 508 and 510once the module elements are released from the substrate by an oxideetching process; the presence of this lifting force therefore precedessegregation of the tethers at 518 and 520.

The free ends of the lifting beams 508 and 510 are placed near therotational axis of the hinges 512 in order to maximize the liftingeffect on the etch plate 112 and so that the flip-chip structures aresufficiently elevated for convenient access. Preferably this lifting isarrange to permit use of probe tip engagement with etch plate 112 incompleting the rotation. Separation distances in the range of 10 to 15micrometers between the hinge axis and the hinge-adjacent ends of thelifting beams 508 and 510 are found to be suitable. Cross sectionaldetails of the free end of the lifting beams 508 and 510 appear in theFIG. 6 k drawing. For stability enhancement purposes the etch plate 112is arranged to be larger than the largest flip-chip structure to beserviced. The etch plate is preferably the last element on the surfaceof the host module to be released and therefore the only structure tobear the force of the lifting beams 508 and 510. Otherwise, delicatefeatures such as micromirror flexures could rupture before the surfaceis fully released from the sacrificial substrate. The etch plate 112 ispreferably composed of a multi layered structure of polysilicon as isillustrated in the FIG. 6 i drawing.

The thin tethers used in locations 518 and 520 in the FIG. 5 modules maybe removed by a laser cutter or burned off when an electrical potentialis applied between for example the anchor and the small pad adjacent toit. The tethers 104 connecting the etch plate to the flip-chip structureare intended to be removed in the same manner once chip rotation andbonding are complete. A small divot or necked-down region in the end ofthe tethers can concentrate either the mechanical stress or theelectrical current density of a bum-through current at a selected pointalong the edge of the flip-chip structures. A laser cutter is also quiteeffective for tether disconnection and is in fact the preferred methodof removing all forms of tethers from the FIG. 5 mechanism. The anchortethers 518, 520 are cut to facilitate off-chip hinge bonding while theflip-chip tethers at 104 are severed to permit use of a flip-chipbonding machine and thermo-compression bonding in assembling the modulesinto an integral flip-chip device.

The etch plate 112 is in fact a MEMS module protecting element of someperhaps surprising significance in the overall scheme of the presentinvention. It is in fact the stabilizing and rigidizing effect of thisetch plate member on the flip-chip MEMS module 100 that enablessuccessful manipulation and handling of the module in the espousedremoved-substrate state. Without the presence of this etch plate 112 thesubstrate-removed module 100 would in fact be so fragile and damagesusceptible as to be of little or no practical value. Such asubstrate-removed module would be vulnerable to distortion and breakagein air currents or washing baths and during manual manipulation forbonding attempts, especially since it is not only thin and fragile inits own right but receives only limited support and contour control byway of elongated severable tethers of for example polysilicon material.

According to the present invention the flip-chip MEMS module 100 is infact effectively no longer rotatable in the FIG. 5 c drawing view but isrigidly held in position with respect to substrate 110 by the combinedeffect of the hinge 512 and the latching slider assembly 105 and itsengagement with the etch plate 112 in FIG. 5 c. This engagement involvesthe etch plate tongue element 514 as is discussed in subsequentparagraphs below. By way of clarifying summarization therefore, in theFIG. 5 c view of the MEMS module the etch plate 112 has been rotatedthrough an angle of substantially one hundred eighty degrees from theFIG. 5 a fabrication position, rotated into a tether supported off chipposture, by way of the hinge 512. The etch plate and thus the MEMSmodule are held rigidly in this position by the freedom of rotation-onlycharacteristic of the hinge 512 together with the rotation-precludingnature of the latching slider assembly 105.

The latching slider assembly 105 is shown in plan view detail in theFIG. 5 b and FIG. 5 c drawings. Cross sectional views taken along theslider assembly 105 and through adjacent portions of the FIG. 5assembly, views taken along the eleven cutting lines a—a through k—k inFIG. 5 c, appear in the eleven views of the FIG. 6 drawing herein andare described in ensuing paragraphs herein. As may be observed withrespect to the differences between the slider assembly 105 as it appearsin the FIG. 5 b and FIG. 5 c drawings the leftmost triangular shapedportion 524 of the slider assembly 105 in FIG. 5 b becomes segregatedinto two portions in the FIG. 5 c drawing—as a part of the cap portion522 of the slider assembly being mating with the tongue portion 514 ofthe etch plate element 112. This mating may in fact be preferablyaccomplished by way of a probe tip, 528 in FIG. 5 c, engaging theaperture 530 in the slider pentagonal portion 524 with a rightwarddirected force to close the slider assembly gap at 536, in FIG. 5 b.

The FIG. 5 b gap, 536, preferably is made of a shorter length than thetongue 514 in order to prevent damage to the tongue 514 and the etchplate 112 from inadvertent excessive rightward movement from the probetip 528 engagement. According to this arrangement the two sliderportions meet at 540 in FIG. 5 b before damage to the tongue 514 canoccur. Lengths of 45 micrometers and 50 micrometers for the gap 536 andthe tongue 514 are found to be satisfactory for this damage limitingpurpose. The remainder parts 532 and 534 of the pentagonal shaped sliderportion 524 are actually substrate-attached guide rails serving both tohold the slider assembly in a captive substrate-parallel condition andto prevent inadvertent movement of the slider assembly 105 in theleftward direction by the probe tip 528. The cross sectional shape ofthe remainder parts 532 and 534 are shown in the drawing of FIG. 6 bwhere the sliding but capturing nature of the remainder parts 532 and534 also appears. The FIG. 5 b and FIG. 5 c, thin rectangular patternsat 538 in the slider assembly represent dimples resulting from formationof elongated sliding feet 537 as are more visible in the FIG. 6 ddrawing. The space immediately below the feet 537 in FIG. 6 d is ofabout one-half micrometer thickness and is preserved during thedeposition process by the presence of a later removed oxide layer.

The latching slider assembly 105 in FIG. 5 is thus topographicallydisposed using a vertical spacer plate to elevate the tongue and capduring fabrication. Once rotated, the tongue portion 514 of the etchplate 112 rests beneath the cap 522 of the slider assembly 105 so thatthe tongue and cap mate when the slider assembly 105 is in theengaged-with-etch-plate position. The tongue portion 514 is formed inthe upper or Poly-2 polysilicon layer of the FIG. 5 device; when rotatedinto the FIG. 5 b and FIG. 5 c positions this upper layer tongue thus isdisposed in the lower layer of the rotated etch plate 112 where it isengaged by the slider assembly cap 522. The slider assembly is arrangedwith left end and right end stops in FIG. 5 to retard excessive, perhapsmanually achieved, motion that may damage the rotated etch plate.

After performing a release etch, the etch plate 112 may be rotated andlatched into position using the standard micromanipulator of a probestation or even by a hand-held probe tip, as represented at 528 in FIG.5 c, with some practice. When thusly rotated the flip-chip structuresformed in the MEMS modules (402 in FIG. 4) are then ready for bonding tofor example CMOS receiving modules (404 in FIG. 4) using solder, indiumor a variety of conductive adhesives. FIG. 5 c shows the slider assemblyand etch plate in the latched position and illustrates an additional pad542 connecting with the tongue 514 that may be used to receive probe tipforce and thus accomplish a leveling of the rotated etch plate 112before the slider assembly can be engaged with the tongue in someinstances.

With the FIG. 5 anchor tethers cut, the lifting beams 508 and 510provide sufficient elevation such that arrays may be easily rotated offthe edge of the module in the presence of methanol fluid resistanceduring a release rinse. Care is however needed when removing thesubstrate free MEMS module structure from a rinse bath to avoid surfacetension damage to delicate elements. After removal from the rinse, thearrays can then simply be dried in air rather than using a criticalpoint dryer since they no longer rest above a substrate that wouldordinarily damage mirror surfaces or other structure as methanol oranother rinse agent evaporates. The lifting beams 508 and 510 appear incross sectional representation in the FIG. 6 a drawing where a metallicgold layer is shown at 600, 602 and 604 and this gold is shown tooverlay a Poly-1 layer.

FIG. 6 in the drawings therefore includes the eleven views of FIG. 6 a,FIG. 6 b, FIG. 6 c, FIG. 6 d, FIG. 6 e, FIG. 6 f, FIG. 6 g, FIG. 6 h,FIG. 6 i, FIG. 6 j and FIG. 6 k. Each of these FIG. 6 drawings is across sectional representation of a part of the FIG. 5 c MEMS modulethat is taken along the section lines identified with the same lowercase letters in the FIG. 5 c drawing. Element identification numbersused in the FIG. 5 c drawing and in the other drawings of this documentare repeated to the best degree possible in the FIG. 6 drawings and arebelieved to thus identify the structure shown in the FIG. 6 drawings toa degree needing only brief additional clarifying comments.

By way of such clarification, the FIG. 6 a drawing shows the substrateof the FIG. 5 devices at 606; this substrate may be made of dopedsilicon in the MUMPS process devices. Overlaying the substrate 606 is anitride electrical insulation layer 608 that may be of ½ to 5micrometers thickness for example. The upper surface of the nitridelayer 608 may be referred-to as the “fabrication surface” of the FIG. 6device. At 516 in the FIG. 5 and FIG. 6 drawings is represented theanchor used to hold the etch plate 112 in its pre release conditionuntil the tether-severing release is elected. The anchor 516 is composedof rigidly joined Poly-1, Poly-2 and metal layers.

The FIG. 6 b drawing represents a cross sectional view taken along thesection lines b—b in FIG. 5, i.e., through the head 531 portion of theslider assembly 105. In FIG. 6 b the slider head guide rails 532 and 534may be appreciated to hold the Poly-1 layer 607 of the head 531 captivenotwithstanding its movement to the right in the FIG. 5 c drawing. Theleftwise motion stop portions of the slider head guide rails 532 and 534may also be appreciated from the FIG. 5 c drawing. The nature of thecontinuous vias 523 and 525 surrounding the periphery of the head 531and also surrounding the pentagonal opening 530 in the center of thehead 531 may also be appreciated from the FIG. 6 b drawing. Beneaththese vias 523 and 525 lies a permanent joining of the Poly-1 and Poly-2layers of the slider head at 605 and a trapped oxide space 609 remainingbetween the Poly-1 and Poly-2 layers as a result of being completelysurrounded by the vias 523 and 525 even during an etching step precedingthe FIG. 6 b view. This trapped oxide transforms the FIG. 6 b elementsinto a three-layer structure of significant rigidity and desirablestiffness. The permanent joining of the Poly-1 and Poly-2 layers of theslider head at 605 in FIG. 6 b may of course be achieved by way offorming removed areas in the oxide layer separating the Poly-1 andPoly-2 materials prior to deposition of the Poly-2 layer.

The FIG. 6 c drawing represents a cross sectional view taken along thesection lines c—c in FIG. 5, i.e., through the leading portion of thehead 531 and the adjoining portion of the slider assembly 105. Thedimples at 527 in both the FIG. 5 c and FIG. 6 c views of the sliderassembly 105 are of interest in the FIG. 6 c drawing. These dimplesresult from a formation of the sliding feet 605. The two-micrometerthick oxide layer formerly present at 607 in FIG. 6 c is etched into arecessed pattern of about ½ micrometer thickness below the feet 605 inorder to form the feet. Other features of the FIG. 6 c drawing areidentified in connection with the FIG. 6 b drawing. This ½ micrometerthickness provides movement clearance for the slider assembly 105 duringthe flipped-over MEMS module latching event.

The FIG. 6 d drawing represents a cross sectional view taken along thesection lines d—d in FIG. 5, i.e., through a single Poly-1 layer portionof the slider assembly 105. The nature of the FIG. 5 recesses 538overlying the feet at 537 in FIG. 6 d is visible in the FIG. 6 ddrawing. FIG. 6 d is a suitable location in the FIG. 6 drawings to alsoappreciate that the slider assembly 105 in the FIG. 5 drawing is in factcomposed of a single elongated strip of the Poly-1 material, materialappearing at 543 in the FIG. 6 d drawing, and that this single strip ofPoly-1 is overlaid at its right most and left most ends in FIG. 5 withsegments of Poly-2 material forming the head and sliding cap portions ofthe FIG. 5 assembly.

The FIG. 6 e drawing represents a cross sectional view taken along thesection lines e—e in FIG. 5, i.e., through an intermediate portion ofthe slider assembly 105. Several somewhat unusual details of the FIG., 5assembly appear in the FIG. 6 drawing; one of these details concerns themanner in which the sliding cap 522 and also the slider assembly 105 areheld in captivity adjacent the substrate 606. This captivity is achievedby way of the guide rails at 540 in both FIG. 5 and FIG. 6 e holding thePoly-1 layer portions at 611 in confinement below the guide rails. ThePoly-1 layer portions at 611 are joined to the cap 522 at 610 in FIG. 6e in the joined polysilicon layers manner discussed with respect to theconnection 605 in FIG. 6 b and thus the two layer portions at 611 andthe cap 522 form a single entity that is confined in sliding fashion bythe guide rails 540. Immediately below the cap 522 in the FIG. 6 edrawing is a dummy plate member 614 of Poly-1 material used to providespacing during fabrication of the cap 522 for the tongue 514 that isultimately held in captivity by the cap 522. The dummy plate member 614is in a coplanar relationship with tongue 514 when the etch plate 512 isin the latched condition. The square dots 519 in the guide rails 540 inFIG. 5 represent anchor points by which the guide rails 540 and anintermediate layer of Poly-1 material are attached to the nitride layer608 and the substrate 606 as is shown at the two locations 519 in theFIG. 6 e drawing. The similar appearing but smaller square dots at 521in the FIG. 5 b drawing represent connecting vias between Poly-1 andPoly-2 layers as appear at 521 in the FIG. 6 e drawing.

The FIG. 6 f drawing represents a cross sectional view taken along thesection lines f—f in FIG. 5, i.e., through another portion of the sliderassembly 105. The only significant difference between the FIG. 6 edrawing and the FIG. 6 f drawing lies in the absence of showing theguide rail substrate connections at 519 in FIG. 6 c in the FIG. 6 fdrawing.

The FIG. 6 g drawing represents a cross sectional view taken along thesection lines g—g in FIG. 5, i.e., through another portion of the sliderassembly 105 as it is engaged with the tongue 514. Presence of thisengaged tongue 514 rather than the dummy plate 614 represents the majordifference in FIG. 6 g from that shown in FIG. 6 f. Note also theabsence of the guide rails 540 in the FIG. 6 g drawing; this absenceoccurs because the FIG. 6 g view actually is taken from a flippedlocation off the substrate 606.

The FIG. 6 h drawing represents a cross sectional view taken along thesection lines h—h in FIG. 5, i.e., through another off substrate portionof the flipped MEMS module assembly. Although little effort is made tomaintain scale consistency either within the FIG. 5 and the FIG. 6drawings or between the FIG. 5 and FIG. 6 drawings, the FIG. 6 h drawingis the first in which scale inconsistency becomes immediately apparent.This scale difference is notable with respect to the size of the flippedpad 542 in the FIG. 6 h drawing and the layer of Poly-1 material at 543in the FIG. 6 d drawing; these two areas are in fact of the samephysical size and are moreover of the same physical size as the voidarea 503 appearing in the FIG. 5 b drawing where the pad 542 wasactually formed during the process of fabricating the FIG. 5 MEMSmodule. As shown in the FIG. 6 h drawing the pad 542 is composed of aninterconnected combination of Poly-1 and Poly-2 layers. As noted aboveherein the pad 542 provides a convenient area to which probe tippressure may be applied in order to flatten parts of the FIG. 5 moduleespecially during engagement of slider cap 522 with tongue 514. The voidarea 503 is hidden by the slider head 531 in the FIG. 5 c drawing.Another void area appears at 544 in the etch plated 112 in the FIG. 5 cdrawing; this void area is of course the location in which the sliderhead 531 was fabricated; slider head and void area 544 are coincident inthe pre-rotation view of FIG. 5 a.

The FIG. 6 i drawing represents a cross sectional view taken along thesection lines i—i in FIG. 5, i.e., through a third off substrate portionof the flipped MEMS module assembly. The notable new feature in the FIG.6 i drawing is the metallic pad 620; this metallic pad also appears inthe FIG. 5 a drawing where its intended purpose is suggested byproximity to the anchor 516. By way of the pad 620 and the metallic padportion of the anchor 516, at 602 in the FIG. 6 a drawing, it ispossible to lower two probes onto the FIG. 5 module and pass anelectrical current between these two pads in order to burn through thetethers shown in remainder fashion at 518 and 520 in the FIG. 5 drawing.

The FIG. 6 j drawing represents a cross sectional view taken along thesection lines j—j in FIG. 5, i.e., through a fourth off substrateportion of the etch plate 112 of the flipped MEMS module assembly. Inthe FIG. 6 j drawing the void nature of the pentagonal patternsurrounding the tether remainder portions at 520 is clearly visible at622. This pentagonal void arises of course from the slider head 531having been fabricated in this location in the FIG. 5 a view andprevious conditions of the MEMS module apparatus. The separated butconnected two polysilicon layer composition of the etch plate 112 isalso apparent in the FIG. 6 j drawing. The often trapezoidal crosssection nature of the tethers 104 connecting the etch plate 112 with theMEMS module 100 is also apparent in the extreme left and right portionsof the FIG. 6 j drawing.

The FIG. 6 k drawing represents a cross sectional view taken along thesection lines k—k in FIG. 5, i.e., through the movable head or etchplate 112 engaging portion of the lifting beam 510 in the flipped MEMSmodule assembly. By comparing the FIG. 6 k drawing with the FIG. 6 adrawing it is possible to see that the head portion of the lifting beamsis composed of only polysilicon material without the presence of themetallic layer.

FIG. 8 through FIG. 11 in the drawings show another MEMS device use ofthe latch arrangement described in the FIG. 5 and FIG. 6 drawings. Inthe FIG. 8 drawing there appears a flexibly connected electricalinterconnection bond pad that is a part of a MEMS module for a MEMSdevice, i.e., a sacrificial substrate micromechanical module as thismodule appears following removal of the sacrificial substrate. The FIG.8 bond pad 800 is provided with two tongue elements 802 and 804 that aresimilar in nature to the tongue element 514 appearing in FIG. 5 herein.The FIG. 8 tongue elements however accomplish a different and permanentfunction in the MEMS device in that they hold the bond pad 800 in acontinuing electrical connection with a corresponding pad 900 of a MEMSreceiving module such as the module of FIG. 9 herein.

As may be anticipated by the presence of the latch elements 902 and 904in the FIG. 9 drawing, the FIG. 8 bond pad 800 is intended for latchedmating with the FIG. 9 bond pad 900 during assembly of the FIG. 8 andFIG. 9 modules into a MEMS device. This latched mating may also beaccomplished with the use of manually manipulated probe tips afteralignment of the FIG. 8 and FIG. 9 modules. During the latching part ofthis sequence one probe tip may be used to hold the aligned modules andpads in pressure fixed position and another probe tip engagedsequentially with each of the sliding caps of latches 902 and 904 tolock the tongues 802 and 804 into a permanent position. In thispermanent position the bonding pads 800 and 900 are held in intimatesurface contact to complete the desired electrical interconnectionbetween modules. A series of bonding pads of the 800 and 900 types maybe dispersed around the periphery of the FIG. 8 and FIG. 9 modules;orientation of the tongues and latches for these pads may of course bealtered from that shown in FIG. 8 and FIG. 9 to allow closer spacing ofadjacent pad pairs when needed. FIG. 10 in the drawings shows anenlarged view of two bonding pads of the 800 and 900 types in theirmated condition with the included sliding latch being in the locked orclosed condition.

FIG. 11 in the drawings shows a view somewhat like that of FIG. 10 oftwo flip-chip pads in the aligned and bonded condition. The FIG. 11drawing is included herein for the purpose of illustrating the accuracyachievable during a flip-chip bonding operation using the rotated andlatched off chip alignment and bonding of the present invention. In theFIG. 11 drawing, a drawing originating in a microphotograph of an actualbonded MEMS module pair, each of the small tooth-like serrations 1100surrounding the illustrated bonded flip-chip pads is of two micrometerswidth and two micrometers length in its physical dimensions. Withdetails of these dimensions being shown in the FIG. 11 drawing it isclear that a misalignment between the superimposed pads of FIG. 9 andFIG. 10 would be clearly visible if it measured so much as one quarteror one half of a micrometer in dimension. As represented in FIG. 11however achievement of alignments well within this tolerance isachievable with use of the alignment enabled by the present invention.

The foregoing description of the preferred embodiment has been presentedfor purposes of illustration and description. It is not intended to beexhaustive or to limit the invention to the precise form disclosed.Obvious modifications or variations are possible in light of the aboveteachings. The embodiment was chosen and described to provide the bestillustration of the principles of the invention and its practicalapplication to thereby enable one of ordinary skill in the art toutilize the inventions in various embodiments and with variousmodifications as are suited to the particular scope of the invention asdetermined by the appended claims when interpreted in accordance withthe breadth to which they are fairly, legally and equitably entitled.

1. A latching hinge method of making an electronically controlled MEMSdevice comprising the steps of: fabricating electronic control circuitmodule and MEMS active element module portions of said MEMS device onfirst permanent and second sacrificial substrate members respectively;said second sacrificial substrate MEMS active element module fabricationincluding also multiple substrate layers-resident sacrificialsupplementary components comprised of a substrate hinge mounted etchplate, etch plate to MEMS active element module connection tethers, asubstrate coupled etch plate latch assembly and an etch plate tosacrificial substrate anchor assembly; releasing said MEMS activeelement module and selected of said sacrificial supplementary componentsfrom fabrication-related confinement in said substrate multiple layersinto movable, partially attached to one of said sacrificial substrateand to other of said supplementary components, states; release of saidsubstrate hinge mounted etch plate and tether coupled MEMS activeelement module combination from a temporary confinement by said anchorassembly into a substrate hinge-enabled pivotal condition being a finalof said releasing events; rotating said released hinge mounted etchplate and tether coupled MEMS active element module combination at saidhinge into a selected off of sacrificial substrate position by applyingexternal forces to said etch plate and tethered MEMS active elementmodule combination; latching said etch plate and tethered MEMS activeelement module combination into said selected off MEMS substrate rotatedposition by coupling extendable portions of said etch plate latchassembly with said etch plate using external latch assembly-receivedforces; moving said MEMS active element module, said tether-attachedetch plate, and said hinge attached MEMS active element sacrificialsubstrate combination into a position of selectably aligned MEMS activeelement module engagement with said electronic control circuit module;engaging said MEMS active element module and said electronic controlcircuit module into an aligned, device housing-surrounded electronicallycontrolled MEMS device; and discarding said tethers, said etch plate,said etch plate latch assembly, said etch plate to substrate anchorassembly and said sacrificial second substrate.
 2. The latching hingemethod of making an electronically controlled MEMS device of claim 1wherein said MEMS device includes a micromirror active element.
 3. Thelatching hinge method of making an electronically controlled MEMS deviceof claim 1 wherein said electronic control circuit module includes CMOSelectronic circuits.
 4. The latching hinge method of making anelectronically controlled MEMS device of claim 1 wherein said electroniccontrol circuit module and said first permanent substrate member arecomprised of different semiconductor materials with respect to said MEMSactive element module and said second sacrificial substrate member. 5.The latching hinge method of making an electronically controlled MEMSdevice of claim 1 wherein said step of releasing said MEMS activeelement module and selected of said sacrificial supplementary componentsfrom fabrication confinement in said multiple layers includes etchingaway a reagent-responsive layer of substrate coating material.
 6. Thelatching hinge method of making an electronically controlled MEMS deviceof claim 5 wherein said reagent-responsive layer of substrate coatingmaterial is an oxide layer.
 7. The latching hinge method of making anelectronically controlled MEMS device of claim 1 wherein: said releaseof said etch plate from temporary confinement by said anchor assemblyincludes a chemical reactant free physical change in said anchorassembly.
 8. The latching hinge method of making an electronicallycontrolled MEMS device of claim 1 wherein said step of engaging saidMEMS active element module and said electronic control circuit moduleinto an aligned, device housing-surrounded electronically controlledMEMS device includes a MEMS device package sealing event.
 9. Thelatching hinge method of making an electronically controlled MEMS deviceof claim 1 wherein said rotating step selected off of sacrificialsubstrate position is a position of one hundred eighty degrees rotationwith respect to an upper surface of said sacrificial substrate.
 10. Thelatching hinge method of making an electronically controlled MEMS deviceof claim 1 wherein said step of latching said etch plate and tetheredMEMS active element module combination into said selected off MEMSsubstrate rotated position includes moving portions of said substratecoupled etch plate latch assembly with a tip portion of a portable waferprobe element.
 11. The latching hinge method of making an electronicallycontrolled MEMS device of claim 1 wherein said multiple layers residentsacrificial supplementary components further include a plurality ofphysically stressed lifting beams engaging with said substratehinge-mounted etch plate and performing an initial separation of saidetch plate from said sacrificial substrate.
 12. The latching hingemethod of making an electronically controlled device of claim 1 whereinone of said steps of releasing and rotating includes a heating severingof connection tethers connected with one of said etch plate and saidactive element module.
 13. The latching hinge method of making anelectronically controlled MEMS device of claim 12 wherein, said heatingsevering of connection tethers includes one of an electrical currentflow burning through step and a laser energy heating step.
 14. A hingeand latch method of fabricating an electronically controlled MEMS devicecomprising the steps of: forming electronic control circuit module andMEMS active element module portions of said MEMS device on firstpermanent and second sacrificial substrate members respectively; saidsecond sacrificial substrate MEMS active element module forming stepincluding providing multiple substrate layers-resident sacrificialsupplementary components comprised of a substrate hinge mounted etchplate, etch plate to MEMS active element module connection tethers, asubstrate coupled etch plate latch assembly and an etch plate tosacrificial substrate anchor assembly; releasing said MEMS activeelement module and selected of said sacrificial supplementary componentsfrom forming-related confinement in said substrate multiple layers intomovable, hinge mounted to one of said sacrificial substrate and to otherof said supplementary components, states; rotating said released hingemounted etch plate and tether coupled MEMS active element modulecombination at said hinge into a selected off of sacrificial substrateposition by applying external forces to said etch plate and tetheredMEMS active element module combination; latching said etch plate andtethered MEMS active element module combination into said selected offMEMS substrate rotated position by coupling slidably movable portions ofsaid etch plate latch assembly with said etch plate using external,latch assembly-received, forces; disposing said MEMS active elementmodule, said tether-attached etch plate, and said hinge mounted MEMSactive element sacrificial substrate combination into a position ofregistered MEMS active element module engagement with said electroniccontrol circuit module; and engaging said MEMS active element module andsaid electronic control circuit module into a registered, fixed, devicehousing-surrounded, electronically controlled MEMS device.
 15. Thelatching hinge method of making an electronically controlled MEMS deviceof claim 14 wherein said step of forming electronic control circuitmodule and MEMS active element module portions of said MEMS device onfirst permanent and second sacrificial substrate members respectivelyfurther includes providing on said first permanent substrate member aplurality of sliding engagement guide rail members and a release platemember latching assembly captured therein.
 16. The latching hinge methodof making an electronically controlled MEMS device of claim 14 whereinsaid step of providing multiple substrate layers-resident sacrificialsupplementary components comprised of a substrate hinge includes forminga hinge structure having a hinge pin element that is surrounded by amovable hinge staple portion.